History, status and prospects of producing silicon sensors for HEP experiments at Infineon Technologies

Authors: T. Bergauer, U. Bartl, D. Blöch, M. Döcke, M. Dragicevic, J. Hacker, V. Hinger, A. König, E. Pree, M. Valentan

Within this project we are developing single-sided AC-coupled silicon strip sensors and DC-coupled hexagonal pad sensors for applications in High Energy Physics (HEP) experiments. The project started with a feasibility study to re-produce the state-of-the art of silicon sensors of that time, which were based on high-resistivity n-type float-zone 6-inch silicon wafers. Later, the first silicon strip sensors on 8-inch p-type wafers were produced within this project. This influenced the decision of another project to build a silicon sensor based sampling calorimeter. This paper presents the history, current status, and prospects of this sensor development project, jointly conducted by the Institute for High Energy Physics (HEPHY) of the Austrian Academy of Sciences and Infineon Technologies AG.