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Optimization of strip isolation for silicon sensors
Gehalten von DI Manfred Valentan am 11.06.2011 bei Technology and Instrumentation in Particle Physics 2011, Chicago

Precision machines like electron-positron-colliders and b-factories demand for low material budget and high position

resolution when it comes to particle tracking. A low material budget can be achieved by using thin double-sided

silicon detectors (DSSDs) and lightweight construction. Since thin sensors only give low signals, one has to be very

careful to achieve high charge collection effciency, which requires an appropriate sensor design. In this paper we

present a detailed investigation of different p-stop patterns used for strip isolation on the n-side of double-sided microstrip

sensors with n-type bulk. We developed test sensors featuring the common p-stop, the atoll p-stop and a

combined p-stop pattern, and for every pattern four different geometric layouts were considered. These sensors were

tested at the Super Proton Synchrotron (SPS) at CERN (Geneva, Switzerland) in a 120 GeV hadron beam. Then they

were irradiated to 700 kGy with a 60Co source and subsequently tested in the same beam as before.

One geometric layout of the atoll p-stop pattern turned out to perform best, both before and after irradiation. The

conclusions of these tests will be applied to the design of DSSDs for the Belle II experiment at KEK (Tsukuba,


Download: TIPP2011_Valentan_revised_2.pdf
Kategorie: Konferenzvortag (contributed)