Process_v_53			
15.09.2003			
ProcessFileStructure_v_5			
		thin/low r (HPK)	thick/high r (STM)
IV	input ID	178	178
	start [V]	0	0
	stop [V]	700	700
	step_size [V]	5	5
	Voltage_1 [V]	450	450
	I_tot_max_at_V1 [uA]	1	1
	V_break_min [V]	500	500
	delay_time [s]	1	1
CV	input ID	217	154
	start [V]	0	0
	stop [V]	300	300
	step_size [V]	5	5
	frequency [kHz]	100	100
	signal_amplitude [mV]	100	100
	V_depl_min [V]	100	100
	V_depl_max [V]	250	260
	C_tot_min [pF]	6	3
	C_tot_max [pF]	11	7
	delay_time [s]	1	1
MOS	input ID	162	224
	start [V]	-5	-5
	stop [V]	20	20
	step_size [V]	0.2	0.2
	frequency [kHz]	75	75
	signal_amplitude [mV]	100	100
	C_tot_min [pF]	200	300
	C_tot_max [pF]	1400	600
	flat_band_Vmin [V]	0	0
	flat_band_Vmax [V]	3	10
	delay_time [s]	1	1
GCD	input ID	177	177
	bias [V]	5	5
	start [V]	5	5
	stop [V]	-20	-20
	step_size [V]	-0.5	-0.5
	surface_current_min [pA]	5	5
	surface_current_max [pA]	100	100
	delay_time [s]	1	1
R_poly	input ID	181	181
	Voltage_for_poly [V]	1	1
	R_poly_min [MOhm]	1	1
	R_poly_max [MOhm]	2	2
	delay_time [s]	1	1
R_alu	input ID	181	181
	Start_Voltage_for_Alu [mV]	5	5
	Stop_Voltage_for_Alu [mV]	25	25
	Step_for_Alu [mV]	5	5
	Alu_min [mOhm/sqr.]	10	10
	Alu_max [mOhm/sqr.]	30	30
	delay_time [s]	1	1
R_p+	input ID	181	181
	Voltage_for_p+ [V]	1	1
	p+ max [Ohm/sqr.]	400	400
	delay_time [s]	1	1
C_ac	input ID	134	140
	frequency [kHz]	75	75
	signal_amplitude [mV]	100	100
	C_ac_min [pF]	18	16
	C_ac_max [pF]	25	20
	delay_time [s]	1	1
C_int	input ID	615	615
	bias [V]	400	400
	frequency [MHz]	0.1	0.1
	signal_amplitude [mV]	100	100
	C_int_min [pF]	0.3	0.5
	C_int_max [pF]	1.3	1.3
	delay_time [s]	5	5
R_int	input ID	180	180
	bias [V]	20	20
	Start_Voltage_acr. [V]	-2	-2
	Stop_Voltage_acr. [V]	2	2
	Step [V]	0.2	0.2
	R_int_min [MOhm]	1000	1000
	delay_time [s]	1	1
IV dielectric	input ID	179	179
	bias [V]	1	1
	start [V]	0	0
	stop [V]	-200	-200
	step_size [V]	-10	-10
	V_break_min [V]	120	120
	current_max_at_120V [nA]	10	10
	delay_time [s]	1	1
[End_of_Input_File]