Process_v_3			
08.04.2002			
ProcessFileStructure_v_3			
		thin/low r (HPK)	thick/high r (ST)
IV	input ID	n.a.	n.a.
	start [V]	0	0
	stop [V]	700	700
	step_size [V]	5	5
	delay_time [s]	1	1
	Voltage_1 [V]	450	450
	I_tot_max_at_V1 [ľA]	1	1
	V_break_min [V]	500	500
CV 	input ID	n.a.	n.a.
	start [V]	0	0
	stop [V]	300	300
	frequency [kHz]	100	100
	signal_amplitude [mV]	100	100
	step_size [V]	5	5
	delay_time [s]	1	1
	V_depl_min [V]	100	100
	V_depl_max [V]	300	260
	C_tot _min [pF]	5	3
	C_tot_max [pF]	10	8
MOS	input ID	n.a.	n.a.
	start[V]	-10	-10
	stop [V]	20	20
	step_size [V]	0.2	0.2
	frequency [kHz]	75	75
	signal_amplitude [mV]	100	100
	C_tot_min [pF]	200	300
	C_tot_max [pF]	1400	600
	flat_band_Vmin [V}	0	0
	flat_band_Vmax [V]	7	7
GCD	input ID	n.a.	n.a.
	bias [V]	5	5
	start [V]	-30	-30
	stop [V]	5	5
	step_size [V]	0.5	0.5
	surface_current_min [pA]	5	5
	surface_current_max [pA]	100	100
R_poly	input ID	n.a.	n.a.
	Voltage_for_poly[V]	1	1
	R_poly_min [MOhm]	1	1
	R_poly_max [MOhm]	2	2
Alu	input ID	n.a.	n.a.
	Start_Voltage_for_Alu [mV]	5	5
	Stop_Voltage_for_Alu [mV]	10	10
	Step_for_Alu [mV]	1	1
	Alu_min [mOhm/sqr.]	10	10
	Alu_max [mOhm/sqr.]	30	30
p+	input ID	n.a.	n.a.
	Voltage_for_p+ [V]	1	1
	p+ max [Ohm/sqr.]	400	400
C_ac	input ID	n.a.	n.a.
	frequency [kHz]	75	75
	C_ac_min [pF]	16	16
	C_ac_max [pF]	20	20
C_int	input ID	n.a.	n.a.
	bias [V]	20	20
	frequency [MHz]	0.1	0.1
	signal_amplitude [mV]	100	100
	C_int_min [pF]	0.5	0.5
	C_int_max [pF]	1.3	1.3
R_int	input ID	n.a.	n.a.
	bias [V]	20	20
	Start_Voltage_acr.  [V]	-5	-5
	Stop_Voltage_acr.  [V]	5	5
	Step [V]	1	1
	R_int_min [MOhm]	1000	1000
IV dielectric	input ID	n.a.	n.a.
	bias [V]	1	1
	start [V]	0	0
	stop [V]	200	200
	step_size [V]	10	10
	V_break_min	120	120
	current_max_at_120V [nA]	10	10
[End_of_Input_File]